Electrically conductive adhesive agent composition, and electrically conductive adhesive film and dicing-die-bonding film using the same

ABSTRACT

The electrically conductive adhesive agent composition comprises a metal particle (Q) and a prescribed organophosphorus compound (A), and the metal particle (Q) comprises a first metal particle (Q1) made of a single metal selected from the group of copper, nickel, aluminum and tin or an alloy comprising two or more metals selected from said group.

CROSS REFERENCE TO RELATED APPLICATIONS

The present application is a continuation application of InternationalPatent Application No. PCT/JP2016/087662 filed on Dec. 16, 2016, whichclaims priority to Japanese Patent Application No. 2016-023614, filed onFeb. 10, 2016. The contents of these applications are incorporatedherein by reference in their entirety.

BACKGROUND Technical Field

The present disclosure relates to an electrically conductive adhesiveagent composition, and an electrically conductive adhesive film and adicing-die bonding film using the same.

Background Art

In general, a semiconductor device is produced by a step of forming adie mounting material for bonding a semiconductor element (chip) onto anelement-supporting part of a lead frame or onto a circuit electrode partof an insulating substrate, a step of mounting the semiconductor elementonto the surface of the die mounting material on the lead frame or thecircuit electrode to bond the semiconductor element to theelement-supporting part of the lead frame or to the circuit electrodepart of the insulating substrate, a wire-bonding step in which anelectrode part of the semiconductor element is electrically bonded witha terminal part of the lead frame or with a terminal part of theinsulating substrate, and a molding step in which the thus assembledsemiconductor device is coated with a resin.

A bonding material is used for bonding a semiconductor element to anelement-supporting part of a lead frame or to a circuit electrode partof an insulating substrate. For example, a lead solder comprising 85% bymass or more of lead having a high melting point and heat resistance hasbeen widely used as a bonding material for power semiconductors such asIGBT and MOS-FET. However, hazardousness of lead has become a problem inrecent years, and there is an increasing demand for lead-free bondingmaterials.

Also, SiC power semiconductors have features such that lower loss andoperation at higher speed and higher temperatures compared with Si powersemiconductors can be realized, and SiC power semiconductors aretherefore considered to be a next-generation power semiconductor. SuchSiC power semiconductors are theoretically capable of operations at 200°C. or higher, but improvement of the heat resistance of the surroundingmaterials including bonding materials is desired so as to actuallyrealize high output and high density of systems such as inverters.

Under these circumstances, various lead-free, high-melting-point bondingmaterials have been valued in recent years. Au-based alloys such asAu—Sn-based alloys and Au—Ge-based alloys disclosed in JapaneseLaid-Open Patent Publication No. 2006-032888, for example, can bementioned as such high-melting-point lead-free bonding materials, andthese alloy materials are noticed as having good electrical conductivityand thermal conductivity and being chemically stable. However, sincesuch Au-based alloy materials which contain a noble metal are expensive,and since expensive high-temperature vacuum reflow machines arenecessary for attaining higher mounting reliability, Au-based alloymaterials are not yet in practical use.

Also, there is a problem such that many lead-free solders have poorwettability compared with lead solders. Due to this poor wettability,there is a higher risk that the solder will not wet over the die padpart and that bonding defects such as insufficient soldering will occurwhen using a lead-free solder as a bonding material. Since the problemof wettability particularly tends to become worse as the melting pointof a lead-free solder increases, it was difficult to attain both heatresistance and mounting reliability at the same time.

In order to solve these problems, studies on diffusion sintering-typesolders such as Cu-based and Sn-based solders have been pursued asdescribed in Japanese Laid-Open Patent Publication Nos. 2007-152385 and2002-263880. Since these diffusion sintering-type solders have a lowmelting point in a state before sintering and the mounting temperaturecan therefore be reduced, and since diffusion sintering-type solderswill irreversibly have a high melting point in a state after thediffusion sintering reaction, diffusion sintering-type solders areexpected to attain both heat resistance and mounting reliability at thesame time, which was difficult with conventional lead-free solders.However, since diffusion sintering-type solders also have the problemsof wettability as with conventional lead-free solders, the risk ofinsufficient soldering cannot be avoided when bonding a large surfacearea. Also, since diffusion sintering-type solders in a state of asintered body are hard and brittle, there are problems of poor stressrelaxation properties and low thermal fatigue resistance. Sufficientbonding reliability therefore has not yet been attained.

A flux such as a carboxylic acid or an alcohol is generally added tomany lead solders and lead-free solders so as to remove the oxide filmformed on a metal. However, these flux components easily absorb moistureand easily bleed out, and the absorbed moisture and the bleed-out areknown to adversely affect the reflow resistance reliability (MSL) aftermoisture absorption in a sealed semiconductor element package. Flux istherefore generally washed off after the solder reflow mounting, butsaid treatment has problems of consuming time and the treatment of thewashing wastewater. On the other hand, reduction of the added amount ofthe flux component, such as a carboxylic acid or an alcohol, that causesmoisture absorption and bleed-out so as to avoid the aforementionedproblems will cause another problem such that removing capability of theoxide film becomes poor and that sufficient electrical conductivity andother properties cannot be exerted. The problems therefore have not yetbeen fully solved.

SUMMARY

It is therefore an object of the present disclosure to provide anelectrically conductive adhesive agent composition which is suitable foruse as an electrically conductive bonding material for bonding asemiconductor chip (particularly a power device) onto anelement-supporting part of a lead frame or onto a circuit electrode partof an insulating substrate, for example, and which is capable offorming, between a semiconductor chip and an element-supporting part ofa lead frame or a circuit electrode part of an insulating substrate, abonding layer that particularly excels both in heat resistance afterbonding and sintering and in mounting reliability while being lead-free,and an electrically conductive adhesive film and a dicing-die bondingfilm using said the electrically conductive adhesive agent composition.

Solution to Problem

As a result of intensive study, the inventors of the present disclosurefound that an electrically conductive adhesive agent compositionsuitable for use as an electrically conductive bonding material capableof forming, between a semiconductor chip (particularly a power device)and an element-supporting part of a lead frame or a circuit electrodepart of an insulating substrate, for example, a bonding layer that islead-free and greatly excels both in heat resistance after bonding andsintering and in mounting reliability can be obtained particularly bycombining a prescribed metal particle (Q) with a prescribedorganophosphorus compound (A). The present disclosure was completedbased on said finding.

The embodiments of the present disclosure are as follows.

[1] An electrically conductive adhesive agent composition comprising:

a metal particle (Q); and

an organophosphorus compound (A) represented by the general formula (1)below,

wherein the metal particle (Q) comprises a first metal particle (Q1)made of a single metal selected from the group of copper, nickel,aluminum and tin or an alloy comprising two or more metals selected fromsaid group

(R_(x)POR)_(y)  (1)

in the general formula (1), each R independently represents an organicgroup, R may be the same or different with each other, both x and y arean integer from 0 to 3, and the sum (x+y) of x and y is 3.

[2] The electrically conductive adhesive agent composition as describedin [1], wherein, in the general formula (1), each R is independentlyselected from an alkyl group, an aryl group, an organic group includinga functional group, an organic group including a heteroatom, and anorganic group including an unsaturated bond.[3] The electrically conductive adhesive agent composition as describedin [1], wherein, in the general formula (1), each R independentlycomprises, in its moiety, one or more group selected from a vinyl group,an acrylic group, a methacrylic group, a maleic acid ester group, amaleic acid amide group, a maleic acid imide group, a primary aminogroup, a secondary amino group, a thiol group, a hydrosilyl group, ahydroboron group, a phenolic hydroxyl group and an epoxy group.[4] The electrically conductive adhesive agent composition as describedin [1], wherein the organophosphorus compound (A) has a number averagemolecular weight of 260 or more.[5] The electrically conductive adhesive agent composition as describedin [1], further comprising a resin (M), wherein at least a portion ofthe resin (M) is a thermosetting resin (M1).[6] The electrically conductive adhesive agent composition as describedin [5], wherein the thermosetting resin (M1) comprises a maleic acidimide compound including two or more units of an imide group in a singlemolecule.[7] The electrically conductive adhesive agent composition as describedin [6], wherein the maleic acid imide compound comprises a backbonederived from an aliphatic amine having a carbon atom number of 10 ormore.[8] The electrically conductive adhesive agent composition as describedin [6], wherein the maleic acid imide compound has a number averagemolecular weight of 3000 or more.[9] The electrically conductive adhesive agent composition as describedin [1], wherein the metal particle (Q) is a mixture comprising the firstmetal particle (Q1) and a second metal particle (Q2) based on a metalcomponent different from the first metal particle (Q1), and

the first metal particle (Q1) and the second metal particle (Q2)comprise a metal component capable of mutually forming an intermetalliccompound.

[10] The electrically conductive adhesive agent composition as describedin [9], wherein the second metal particle (Q2) is made of a single metalselected from the group of copper, nickel, aluminum, tin, zinc,titanium, silver, gold, indium, bismuth, gallium and palladium or analloy comprising two or more metals selected from said group.[11] The electrically conductive adhesive agent composition as describedin [9], wherein at least one of the first metal particle (Q1) and thesecond metal particle (Q2) is an alloy particle comprising two or moremetal components.[12] The electrically conductive adhesive agent composition as describedin [1], wherein at least one endothermic peak is observed in atemperature range of from 100 to 250° C. in DSC (differential scanningcalorimetry) in a state before sintering, and the endothermic peakdisappears in a state after sintering.[13] An electrically conductive adhesive film, comprising theelectrically conductive adhesive agent composition as described in [1]formed in the form of a film onto a substrate.[14] A dicing-die bonding film, comprising:

a dicing tape; and

the electrically conductive adhesive film as described in [13] adheredto the dicing tape.

According to the present disclosure, an electrically conductive adhesiveagent composition comprises a metal particle (Q) and a prescribedorganophosphorus compound (A), and the metal particle (Q) comprises afirst metal particle (Q1) made of a single metal selected from the groupof copper, nickel, aluminum and tin or an alloy comprising two or moremetals selected from said group. Thus, there is provided an electricallyconductive adhesive agent composition suitable for use as anelectrically conductive bonding material capable of forming, between asemiconductor chip (particularly a power device) and anelement-supporting part of a lead frame or a circuit electrode part ofan insulating substrate, for example, a bonding layer that is lead-freeand greatly excels both in heat resistance after bonding and sinteringand in mounting reliability, and an electrically conductive adhesivefilm and a dicing-die bonding film using the electrically conductiveadhesive agent composition.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a cross-sectional diagram showing the layer structure of adicing-die bonding film of an embodiment of the present disclosure.

FIG. 2 is a diagram showing a state in which a dicing-die bonding filmof the present disclosure is adhered to a semiconductor.

FIG. 3 is a diagram for explaining the dicing step.

FIG. 4 is a diagram for explaining the pick-up step.

FIG. 5 is a diagram for explaining the die-bonding step.

FIG. 6 is a diagram showing a cross-section of a resin-moldedsemiconductor element (device).

DESCRIPTION OF EMBODIMENTS

Hereinafter, embodiments of the electrically conductive adhesive agentcomposition, and the electrically conductive adhesive film anddicing-die bonding film using the same according to the presentdisclosure will be described in detail.

<Electrically Conductive Adhesive Agent Composition>

The electrically conductive adhesive agent composition of the presentembodiments comprises a prescribed metal particle (Q) and a prescribedorganophosphorus compound (A). In addition, the electrically conductiveadhesive agent composition preferably further comprises a resin (M).Also, the electrically conductive adhesive agent composition may furthercomprise various additives as necessary.

Unless otherwise mentioned, “metal particle” here mean not only a metalparticle made of a single metal component but also an alloy particlemade of two or more metal components.

[1] Metal Particle (Q)

In the electrically conductive adhesive agent composition of the presentembodiments, the metal particle (Q) preferably comprises a first metalparticle (Q1) made of a single metal selected from the group of copper(Cu), nickel (Ni), aluminum (Al) and tin (Sn) or an alloy comprising twoor more metals selected from said group. Such a first metal particle(Q1) is favorable as the metal particle (Q) of the electricallyconductive adhesive agent composition since this excels in electricalconductivity and thermal conductivity, is relatively inexpensive, and isunlikely to cause ion migration. The metal particle (Q) may be madesolely of the first metal particle (Q1) or may be a mixture comprisingone or more further metal particle in addition to the first metalparticle (Q1).

Preferably, the metal particle (Q) is a mixture comprising the firstmetal particle (Q1) and second metal particle (Q2) based on a metalcomponent different from the first metal particle (Q1), and the firstmetal particle (Q1) and the second metal particle (Q2) contain a metalcomponent capable of mutually forming an intermetallic compound. Byhaving the first metal particle (Q1) and the second metal particle (Q2)contain a metal capable of mutually forming an intermetallic compound, ahigh-melting intermetallic compound can be formed in a state aftersintering even though the overall metal particle (Q) is a metal or analloy with a low melting point in a state before sintering. As a result,by using such the metal particle, low mounting temperature can berealized while exerting excellent heat resistance after sinteringwhereby the properties do not deteriorate even at the mountingtemperature or higher temperatures.

The combinations of metal component capable of forming such theintermetallic compound can be freely selected as necessary, and examplesinclude combinations based on Cu—Sn, Ni—Sn, Ag—Sn, Cu—Zn, Ni—Zn, Ni—Ti,Sn—Ti, and Al—Ti. It is preferable that one metal componentcorresponding to these combinations capable of forming an intermetalliccompound is contained in each of the first metal particle (Q1) and thesecond metal particle (Q2) by one metal component per one combination. Acombination comprising Sn having a low melting point is preferable whenthe mounting temperature needs to be reduced as much as possible. Acombination based on Cu—Sn or Ni—Sn, in particular, is more preferable.

The second metal particle (Q2) is merely required to comprise a metalcomponent that is based on a metal component different from the firstmetal particle (Q1) and that is capable of forming an intermetalliccompound with the first metal particle (Q1), and there is no particularlimitation. But the second metal particle (Q2) is preferably made of asingle metal selected from the group of copper (Cu), nickel (Ni),aluminum (Al), tin (Sn), zinc (Zn), titanium (Ti), silver (Ag), gold(Au), indium (In), bismuth (Bi), gallium (Ga) and palladium (Pd) or analloy comprising two or more metals selected from said group.Specifically, when the first metal particle (Q1) is Cu particle, forexample, the second metal particle (Q2) is a metal particle capable offorming an intermetallic compound with Cu, preferably Sn particles orSn-containing alloy particle, for example.

In addition, preferably, at least one of the first metal particle (Q1)and the second metal particle (Q2) is an alloy particle comprising twoor more metal components. The melting point of the overall metalparticle (Q) can be further reduced if at least one of the first metalparticle (Q1) and the second metal particle (Q2) is an alloy particle.Examples of such an alloy particle preferably include an alloycomprising at least two metals selected from copper (Cu), nickel (Ni),aluminum (Al), tin (Sn), zinc (Zn), titanium (Ti), silver (Ag), gold(Au), indium (In), bismuth (Bi), gallium (Ga) and palladium (Pd).Specifically, those obtained by adding Zn, Bi, Ag, In, Ga, Pd, or thelike to Sn or the like to obtain an alloy and then producing a particlethereof in advance can be mentioned as such an alloy particle.

The content of the first metal particle (Q1) relative to 100% by mass ofthe metal particle (Q) is preferably from 10 to 100% by mass, morepreferably from 30 to 80% by mass. In addition, the content of thesecond metal particle (Q2) relative to 100% by mass of the metalparticle (Q) is preferably from 0 to 90% by mass, more preferably from20 to 70% by mass. Also, the metal particle (Q) may further comprise oneor more of the other metal particle (Qn) made of a single metal or alloyas necessary in addition to the first metal particle (Q1) and the secondmetal particle (Q2). The content of the further metal particle ispreferably 50% by mass or less relative to 100% by mass of the metalparticle (Q).

In terms of reducing environmental load, the metal particle (Q) ispreferably substantially free of Pb (lead), Hg (mercury), Sb (antimony)and As (arsenic). The total content of these components is preferablyless than 0.1% by mass relative to 100% by mass of the metal particle(Q).

Also, the shape of the metal particle (Q) is not particularly limited,and a spherical particle, a dendritic particle, a scale-like particle, aspike-like particle, and the like can be used as necessary. Also,although the particle size of the metal particle (Q) is not particularlylimited, the metal particle (Q) preferably has an average particle size(D50) of 20 μm or less. A relatively thin (e.g. 40 μm or less)electrically conductive adhesive film can be formed by limiting theparticle size of the metal particle (Q) to said range. Also, when usingthe first metal particle (Q1) and the second metal particle (Q2), theaverage particle size (D50) of the first metal particle (Q1) is morepreferably 20 μm or less and the average particle size (D50) of thesecond metal particle (Q2) is more preferably less than 7 m, forexample. An average particle size (D50) in the present disclosure is avalue calculated based on a measurement by the laser diffractionscattering particle size distribution measurement method. Conditions formeasuring the average particle size (d50) will be explained later in thesection concerning the examples.

The content of the metal particle (Q) in the electrically conductiveadhesive agent composition of the present embodiments is preferably from70 to 96% by mass, more preferably from 80 to 94% by mass. By limitingthe content of the metal particle (Q) within this range, formabilitywhen forming the electrically conductive adhesive film can be enhanced,handleability as a film can also be improved, and excellent electricalconductivity can further be exerted after adhesion and sintering.

[2] Organophosphorus Compound (A)

The organophosphorus compound (A) in the electrically conductiveadhesive agent composition of the present embodiments is represented bythe following general formula (1).

(R_(x)POR)_(y)  (1)

In the general formula (1), each R independently represents an organicgroup, and R may be the same or different with each other. Also, each ofx and y is an integer from 0 to 3, and the sum (x+y) of x and y is 3.For example, the general formula (1) represents organic phosphines whenx=3 and y=0, and an organic phosphorous acid ester when x=0 and y=3.

In the electrically conductive adhesive agent composition of the presentembodiments, the organophosphorus compound (A) represented by theaforementioned general formula (1) has a function as a flux which helpsremove the oxide film on the surface of the metal particle (Q), andparticularly effectively acts on metal components that are easilyoxidized, such as Cu, Sn, Ni and Al. Also, compared with fluxes such ascarboxylic acids and alcohols that have conventionally been used ingeneral, the organophosphorus compound (A) is very less likely to absorbmoisture and excels in moisture absorption resistance.

Specifically, the organophosphorus compound (A) is preferably compoundselected from alkyl phosphine, aryl phosphine and organic phosphorousacid ester.

In the general formula (1), each R is preferably independently selectedfrom an alkyl group, an aryl group, an organic group including afunctional group, an organic group including a heteroatom, and anorganic group including an unsaturated bond.

The alkyl group may be linear, branched or cyclic, and may comprise asubstituent. The alkyl group is preferably linear or branched. Also, thealkyl group preferably has a carbon atom number of 3 or more, morepreferably 4 to 18, even more preferably 6 to 15. Specifically, propyl,butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, stearyl andisostearyl groups, and the like can be mentioned as such an alkyl group.

The aryl group may comprise a substituent and preferably has a carbonatom number of 6 to 10. Phenyl, tolyl, xylyl, cumenyl, 1-naphthyl groupsand the like, for example, can be mentioned as such an aryl group.

The organic group including a functional group preferably has a carbonatom number of 1 to 10, more preferably 1 to 6, even more preferably 1to 3. Also, chloro, bromo and fluoro groups, and the like can bementioned as the functional group contained in the organic group.Specifically, chloroethyl, fluoroethyl, chloropropyl, dichloropropyl,fluoropropyl, difluoropropyl, chlorophenyl and fluorophenyl groups, andthe like can be mentioned as such an organic group including afunctional group.

The organic group including a heteroatom preferably has a carbon atomnumber of 3 or more, more preferably 4 to 18, even more preferably 6 to15. Also, nitrogen, oxygen and sulfur atoms, and the like can bementioned as the heteroatom contained in the organic group.Specifically, dimethylamino, diethylamino, diphenylamino,methylsulfoxide, ethylsulfoxide and phenylsulfoxide groups, and the likecan be mentioned as such an organic group including a heteroatom.

The organic group including an unsaturated bond preferably has a carbonatom number of 3 or more, more preferably 4 to 18, even more preferably6 to 15. Specifically, propenyl, propynyl, butenyl, butynyl, oleyl,phenyl, vinylphenyl and alkylphenyl groups, and the like can bementioned as such an organic group including an unsaturated bond. It ismore preferable that a vinylphenyl group, among said groups, iscontained.

Also, in the general formula (1), it is preferable that each Rindependently include, in its moiety, one or more group selected fromvinyl, acrylic, methacrylic, maleic acid ester, maleic acid amide,maleic acid imide, primary amino, secondary amino, thiol, hydrosilyl,hydroboron, phenolic hydroxyl and epoxy groups. More preferably, avinyl, acrylic, methacrylic or secondary amino group, among said groups,is contained.

Specifically, the organophosphorus compound (A) preferably comprisesp-styryl diphenyl phosphine, which is organic phosphines. This type ofcompound is favorable in terms of the low bleed-out property obtained bycontaining a highly reactive vinyl group.

Also, when the thermosetting resin (M1) described below contains amaleimide resin, such an organophosphorus compound (A) also functions asa thermosetting resin component since it is capable of forming acopolymer with a maleimide resin. In addition, since theorganophosphorus compound (A) is less likely to absorb moisture, hassufficiently high molecular weight, and is polymerizable, bleed-out canbe effectively prevented when it is used as a flux component. Therefore,by using such an organophosphorus compound (A) in place of an alcohol ora carboxylic acid, which easily absorbs moisture, the risk of bleed-outcan be reduced and sufficient reliability, particularly reflowresistance after moisture absorption, can be secured even withoutwashing the flux off.

Also, the organophosphorus compound (A) preferably has a number averagemolecular weight of 260 or more from the viewpoint of inhibiting thebleed-out at the time of sintering or the like. Bleed-out can befurthermore reduced by reacting the organophosphorus compound (A) withthe maleimide resin to cause curing, as mentioned above, in addition tolimiting the number average molecular weight of the organophosphoruscompound (A) to 260 or more. As a result, surface contamination ofsubstrates (lead frame and the like) caused by the bleed-out can beprevented and the package reliability can be improved.

The content of the organophosphorus compound (A) in the electricallyconductive adhesive agent composition of the present embodiments ispreferably from 0.5 to 10.0% by mass, more preferably from 1.0 to 5.0%by mass. Sufficient metal oxide film-removing property can be exerted bylimiting said content to this range. A single type of organophosphoruscompound (A) or a combination of two or more types of organophosphoruscompounds (A) can be used.

[3] Resin (M)

The electrically conductive adhesive agent composition of the presentembodiments comprises the aforementioned metal particle (Q), theaforementioned organophosphorus compound (A), and a further resin (M),and at least a portion of this resin (M) is preferably a thermosettingresin (M1). The thermosetting resin (M1) contained in the electricallyconductive adhesive agent composition has functions such as contributingto the film properties (formability, handleability, etc.) in a statebefore sintering, and relaxing the stress and the like between thesemiconductor element and the substrate (lead frame, etc.) caused bythermal cycle in a state after sintering.

The thermosetting resin (M1) preferably comprises a maleic acid imidecompound containing two or more units of an imide group in a singlemolecule particularly from the viewpoint of heat resistance and the filmproperties when being mixed with the metal particle (Q). Maleic acidimide resin (this resin may hereinafter be called a “maleimide resin”)can be mentioned as such a resin comprising a maleic acid imide compoundcontaining two or more units of an imide group in a single molecule. Inparticular, since a thermosetting resin (M1) comprising theaforementioned maleic acid imide resin excels in stress relaxationproperties, thermal fatigue resistance of the electrically conductiveadhesive agent composition after sintering can be improved. As a result,an electrically conductive adhesive agent composition comprising such athermosetting resin (M1) is capable of overcoming the drawbacks in termsof thermal fatigue resistance, i.e., being hard and brittle, which werethe problems of conventional all-metal lead-free solders.

A maleic acid imide resin can be obtained by condensing maleic acid orits anhydride with a diamine or a polyamine, for example. A maleic acidimide resin comprising a backbone derived from an aliphatic amine havinga carbon atom number of 10 or more is preferable from the viewpoint ofstress relaxation properties, and a maleic acid imide resin having acarbon atom number of 30 or more and a backbone represented by thestructural formula (2) below, in particular, is more preferable. Also, amaleic acid imide compound preferably has a number average molecularweight of 3000 or more.

Molecular weight, glass transition temperature Tg, and the like of amaleic acid imide resin may be adjusted by comprising an acid componentother than maleic acid such as a backbone derived frombenzenetetracarboxylic acid or its anhydride, hydroxyphthalic acidbis(ether) or its anhydride, or the like. A phenol novolac resin, aradical generator, or the like is preferably used as a curing agent forthe maleic acid imide resin.

Also, bismaleimide resins represented by the following structuralformulas (3) to (5), for example, can be suitably used as such a maleicacid imide resin.

In the formula (4), n is an integer from 1 to 10. Also, in the formulas(3) to (5), the moiety represented by “X” is a backbone “C₃₆H₇₂”represented by the following structural formula (6). In the formula (6),“*” means the bonding position with N.

The content of the resin (M) in the electrically conductive adhesiveagent composition of the present embodiments is preferably from 4 to 30%by mass, more preferably from 6 to 20% by mass. By limiting the contentof the resin (M) within the aforementioned range, the electricallyconductive adhesive film excels in film properties (formability,handleability, etc.) in a state before sintering, and excels in relaxingthe stress and the like between the semiconductor element and thesubstrate (lead frame, etc.) caused by thermal cycle in a state aftersintering. The resin (M) may consist of a single type of resin or two ormore resins may be mixed. Also, resins other than the aforementionedresins may be further contained as necessary.

[4] Other Components

The electrically conductive adhesive agent composition of the presentembodiments may comprise various additives in addition to theaforementioned components within a range that does not deviate from theobject of the present disclosure. Such additives can be suitablyselected as necessary, and examples include solvents, dispersing agents,radical polymerization initiators, leveling agents and plasticizers.

The electrically conductive adhesive agent composition of the presentembodiments can be obtained by weighing appropriate amounts of theaforementioned components and mixing the same by a known method.Examples of the mixing method include mixing by agitation using rotatingblades, and mixing with the use of a homogenizer, a planetary mixer or akneader.

When the electrically conductive adhesive agent composition of thepresent embodiments is analyzed by DSC (differential scanningcalorimetry), it is preferable that at least one endothermic peak isobserved in the temperature range of from 100 to 250° C. in a statebefore sintering (unsintered state), and that the endothermic peakdisappears in a state after sintering (sintered state). The analysismethod by DSC will be explained later in the section concerningexamples.

At least one endothermic peak observed in the aforementioned temperaturerange in an unsintered state indicates the melting point of the metal oralloy comprising at least one metal component. In other words, saidendothermic peak indicates that when an unsintered electricallyconductive adhesive agent composition is heated (sintered) within theaforementioned temperature range, a specific metal component melts andwets over the surface of the object to which the electrically conductiveadhesive agent composition is adhered, which is advantageous forlow-temperature mounting. In contrast, no endothermic peak is observedwithin the aforementioned temperature range in a sintered state, andthis means that the melting point of the metal component (or alloy) ofthe metal or alloy comprising at least one metal component does notexist within the aforementioned temperature range. In other words, thismeans that a metal which has once melted forms after sintering anintermetallic compound having a high melting point by an intermetallicdiffusion reaction, and that excellent heat resistance is obtained as aresult.

This type of electrically conductive adhesive agent composition enablessintering (mounting) at low temperatures, and, at the same time,exhibits excellent heat resistance after sintering (after mounting) anddoes not cause any defects even when carrying out wire bonding by usinga high-melting-point lead-free solder or reflow treatment. The heatresistance temperature of the electrically conductive adhesive agentcomposition is preferably 250° C. or higher, more preferably 300° C. orhigher. Also, the mounting temperature suitable for mounting asemiconductor chip or the like with the use of the electricallyconductive adhesive agent composition is preferably from 100 to 250° C.,more preferably from 100 to 200° C.

<Electrically Conductive Adhesive Film>

The electrically conductive adhesive agent composition of the presentembodiments is preferably formed in the form of a film onto a substrateto be used as an electrically conductive adhesive film. By forming theelectrically conductive adhesive agent composition into a film, bondingof a power semiconductor element to a substrate, for example, can beperformed with better handleability compared with conventional soldersand electrically conductive pastes. Specifically, the electricallyconductive adhesive film of the present embodiments can be adhered tothe back surface of a wafer on which a power semiconductor is formed andbe divided together with the wafer when dividing the wafer into eachelement to produce chips (dicing step). Since just the right amount ofan electrically conductive adhesive film can be formed onto the entireback surface of the elements (wafer), problems of conventional solderssuch as insufficient wetting and running off can be avoided and goodmounting can be performed. Also, since an electrically conductiveadhesive film is formed in advance with a prescribed thickness, theheight of the element after die-bonding can be easily controlled withprecision compared with conventional solders and electrically conductivepastes.

The electrically conductive adhesive film of the present embodiments ispreferably obtained by forming the electrically conductive adhesiveagent composition of the present embodiments in the form of a film ontoa substrate. The forming method is not particularly limited, and formingcan be performed by a known method. Examples of the forming methodinclude a method in which a varnish obtained by dissolving/dispersingthe electrically conductive adhesive agent composition in a solvent isapplied onto a substrate and then dried, a melt-application method inwhich the electrically conductive adhesive agent composition is meltedat high temperatures and then applied onto a substrate, a method inwhich the electrically conductive adhesive agent composition is pressedat a high pressure together with the substrate, an extrusion method inwhich the electrically conductive adhesive agent composition is melted,extruded with the use of an extruder and then drawn, and a printingmethod in which a screen mesh (screen printing) or a metal plate(gravure printing) is filled with the aforementioned varnish so as totransfer the same.

Thickness of the electrically conductive adhesive film is preferablyfrom 5 to 100 m, more preferably from 20 to 50 m. Sufficient adhesivepower can be obtained while suppressing electric resistance and heatresistance by limiting the thickness of the electrically conductiveadhesive film to the aforementioned range.

The electrically conductive adhesive film preferably has a storageelastic modulus at 1 Hz after sintering of from 1000 to 30000 MPa, morepreferably from 5000 to 20000 MPa. Excellent properties in terms ofthermal fatigue resistance evaluated by the thermal cycle test (TCT) canbe exerted while exerting strong adhesive power by limiting the storageelastic modulus of the electrically conductive adhesive film to theaforementioned range.

The electrically conductive adhesive film preferably has a thermalweight loss of less than 1% when heated for 2 hours at 250° C. under anitrogen atmosphere. By limiting the thermal weight loss to theaforementioned range, resin, in large part, would not thermallydecompose when the electrically conductive adhesive film is sintered,and excellent flexibility can be maintained.

Furthermore, by adhering the electrically conductive adhesive film ofthe present embodiments to a dicing tape to obtain a dicing-die bondingfilm, an electrically conductive adhesive film and a dicing tape can besimultaneously adhered to a wafer, and the processing steps can besimplified thereby.

The aforementioned embodiments will be explained by reference to thefigures.

FIG. 1 is a cross-sectional diagram showing a dicing-die bonding film 10of the present disclosure. The dicing-die bonding film 10 mainly iscomposed of a dicing tape 12 and an electrically conductive adhesivefilm 13. The dicing-die bonding film 10 is one example of a tape forsemiconductor processing, and the film may be cut in advance (pre-cut)into prescribed shapes in accordance with the used step or apparatus,may be cut for each semiconductor wafer, or may be have the form of along roll.

The dicing tape 12 is composed of a supporting substrate 12 a and apressure-sensitive adhesive layer 12 b formed thereon.

A release-treated PET film 11 covers the dicing tape 12 and protects thepressure-sensitive adhesive layer 12 b and the electrically conductiveadhesive film 13.

The supporting substrate 12 a is preferably radiolucent. Specifically,plastic, rubber, and the like are normally used, but the material is notparticularly limited as long as it is radiolucent.

The base resin composition of the pressure-sensitive adhesive of thepressure-sensitive adhesive layer 12 b is not particularly limited, andan ordinary radiation-curable pressure-sensitive adhesive is used. Anacrylic pressure-sensitive adhesive including a functional group, suchas a hydroxyl group, reactive with an isocyanate group is preferable.Although there is no particular limitation, an acrylicpressure-sensitive adhesive having an iodine number of 30 or less and aradiation-curable carbon-carbon double bond structure is preferable.

As mentioned above, the electrically conductive adhesive film 13 of thepresent embodiments particularly preferably has a structure comprising aprescribed metal particle (Q) and a prescribed organophosphorus compound(A) in terms of attaining excellent heat resistance and mountingreliability at the time of bonding a semiconductor power element to ametal lead frame, and of low environmental load.

(Method for Using Dicing-Die Bonding Film)

The dicing-die bonding film 10 of the present embodiments can besuitably used in the production of a semiconductor device.

First, the release-treated PET film 11 is removed from the dicing-diebonding film 10, the electrically conductive adhesive film 13 is adheredto a semiconductor wafer 1, and the side part of the dicing tape 12 isfixed with a ring frame 20 as shown in FIG. 2. The ring frame 20 is anexample of dicing frames. The electrically conductive adhesive film 13is laminated onto a part of the dicing tape 12 to which thesemiconductor wafer 1 is bonded. There is no electrically conductiveadhesive film 13 on the part of the dicing tape 12 that is in contactwith the ring frame 20.

Thereafter, as shown in FIG. 3, the under surface of the dicing tape 12is fixed by suction on the suction stage 22, and the semiconductor wafer1 is diced into prescribed sizes by using a dicing blade 21 so as toproduce a plurality of semiconductor chips 2.

Then, as shown in FIG. 4, while the dicing tape 12 is fixed by the ringframe 20, the tape push-up ring 30 is moved upwards to bend the centerpart of the dicing tape 12 upwards, and the dicing tape 12 is irradiatedwith radiation such as ultraviolet ray so as to weaken the adhesivepower of the adhesive layer 12 b that constitutes the dicing tape 12.Subsequently, the push-up pin 31 is moved upwards at positionscorresponding to each semiconductor chip, and the semiconductor chips 2are picked up by the suction collet 32.

Thereafter, as shown in FIG. 5, the picked up semiconductor chip 2 isadhered to a support component such as a lead frame 4 or to anothersemiconductor chip 2 (die-bonding step), and the electrically conductiveadhesive film is sintered.

Then, as shown in FIG. 6, a semiconductor device is obtained throughsteps such as Al wire attachment and resin molding.

Embodiments of the present disclosure have been explained above, but thepresent disclosure is not limited to the aforementioned embodiments andincludes various embodiments encompassed by the concept of the presentdisclosure and the claims. Also, various modifications may be madewithin the scope of the present disclosure.

EXAMPLES

The present disclosure will be further explained in detail below basedon examples. However, the present disclosure is not limited by theexamples.

<Raw Materials>

Abbreviations for the raw materials used are as follows.

[Metal Particles (Q)]

Mixture obtained by mixing the first metal particle (Q1) with the secondmetal particle (Q2) in a mass ratio of 2:1

First Metal Particle (Q1)

Cu particle: fine copper powder, a product of Mitsui Mining & SmeltingCo., Ltd., average particle size (D50): 5 μm

Second Metal Particle (Q2)

SnBi alloy particle: fine solder powder (Sn₇₂Bi₂₅), a product of MitsuiMining & Smelting Co., Ltd., average particle size (D50): 7 μm

The average particle size (D50) of the metal particles was measured by alaser diffractometer (SALD-3100, product of Shimadzu Corp.).

[Resin (M)]

Maleimide Resin

Mixture obtained by mixing BMI-3000 with, as a polymerization initiator,Perbutyl® O in a mass ratio of 100:5

BMI-3000: Bismaleimide resin represented by the following structuralformula (7), a product of DESIGNER MOLECULES INC, number-averagemolecular weight: 3000. In the formula (7), n is an integer from 1 to10. The backbone derived from an aliphatic amine has a carbon atomnumber of 36.

Perbutyl® O: t-butyl peroxy-2-ethylhexanoate, a product of Nihon YushiCorp.

Epoxy Resin

Mixture obtained by mixing YD-128, YD-013, YP-50 and 2PHZ in a massratio of 15:5:10:1

YD-128: Bisphenol A-type liquid epoxy resin, a product of Nippon Steel &Sumikin Chemical Co., Ltd.

YD-013: Bisphenol A-type solid epoxy resin, a product of Nippon Steel &Sumikin Chemical Co., Ltd. (The same applies hereinafter.)

YP-50: Phenoxy resin, a product of Nippon Steel & Sumikin Chemical Co.,Ltd. (The same applies hereinafter.)

2PHZ: 2-phenyl-4,5-dihydroxymethylimidazole, a product of ShikokuChemicals Corp. (The same applies hereinafter.)

[Flux]

Organic Phosphorous Acid Ester

JP-351: tris(nonylphenyl)phosphite, a product of Johoku Chemical Co.,Ltd.

Organic Phosphine 1

DPPST*: diphenylphosphino styrene, a product of Hokko Chemical IndustryCo., Ltd.

Organic Phosphine 2

DPPP®: 1,4-bis(diphenylphosphino)propane, a product of Hokko ChemicalIndustry Co., Ltd.

Organic Phosphine 3

DPPB®: 1,4-bis(diphenylphosphino)butane, a product of Hokko ChemicalIndustry Co., Ltd

Tetraethylene glycol: a product of Tokyo Chemical Industry Co., Ltd.

Abietic acid: a product of Tokyo Chemical Industry Co., Ltd.

[Dicing Tape]

A dicing tape was obtained by applying a pressure-sensitive adhesivecomposition onto a supporting substrate so that the thickness of thepressure-sensitive adhesive composition after drying would be 5 μm, andthen drying the same for 3 minutes at 120° C.

Pressure-sensitive adhesive composition: A mixture obtained by mixingn-octylacrylate (product of Osaka Organic Chemical Industry Ltd.),2-hydroxyethylacrylate (product of Osaka Organic Chemical IndustryLtd.), methacrylic acid (product of Tokyo Chemical Industry Ltd.), and,as a polymerization initiator, benzoyl peroxide (product of TokyoChemical Industry Co., Ltd.) in a mass ratio of 200:10:5:2 was dispersedin an appropriate amount of toluene, and an acrylic resin solutionincluding a functional group was obtained by adjusting the reactiontemperature and time. Then, 2 parts by mass of CORONATE L (product ofTosoh Corp.) was added as a polyisocyanate relative to 100 parts byweight of the acrylic resin solution, an appropriate amount of toluenewas further added as an additional solvent, and the mixture was agitatedto obtain a pressure-sensitive adhesive composition.

Supporting substrate: A supporting substrate was obtained by meltingresin beads made of low-density polyethylene (NOVATEC LL, product ofJapan Polyethylene Corp.) at 140° C., and forming the same into a longfilm with a thickness of 100 μm with the use of an extruder.

<Preparation of Electrically Conductive Adhesive Agent Composition>

Examples 1 to 4

In Examples 1 to 4, electrically conductive adhesive agent compositionswere obtained by mixing the materials shown in Table 1, among theaforementioned materials, so that the proportion of the metal particle(Q) would be 93.7% by mass, the proportion of the resin (M) would be4.5% by mass, and the proportion of the flux would be 1.8% by mass.

Comparative Examples 1 to 3

In Comparative Examples 1 to 3, electrically conductive adhesive agentcompositions were obtained by mixing the materials shown in Table 1,among the aforementioned materials, so that the proportion of the metalparticle (Q) would be 85% by weight, the proportion of the resin (M)would be 8% by weight, and the proportion of the flux would be 7% bymass.

<Production of Electrically Conductive Adhesive Film>

Subsequently, the electrically conductive adhesive agent compositionsproduced in the examples and comparative examples were formed intoslurries by using toluene as a solvent, and the slurries were agitatedwith the use of a planetary mixer, thinly applied onto a moldrelease-treated PET film, and then dried for 2 minutes at 120° C. so asto obtain electrically conductive adhesive films with a thickness of 40μm.

<Production of Dicing-Die Bonding Film>

The thus obtained electrically conductive adhesive films of the examplesand comparative examples were adhered to a dicing tape to obtaindicing-die bonding films (electrically conductive adhesivefilm/pressure-sensitive adhesive composition/supporting substrate).

<Evaluation>

The properties below were evaluated with the dicing-die bonding films ofthe examples and comparative examples. The evaluation conditions foreach property are as described below. The results are shown in Table 1.

[Presence or Absence of PKG Delamination (Moisture AbsorptionResistance)]

The dicing-die bonding films of the examples and comparative exampleswere bonded to the surfaces of Si wafers with an Au-plated backside at100° C., then the wafers were diced into 5 mm squares to obtain dicedchips (Au plating/Si wafer/electrically conductive adhesive film). Eachchip was die-bonded onto an Ag-plated metal lead frame at 140° C.,subsequently sintered for 3 hours at 230° C., and then sealed with anepoxy-based molding resin (KE-G300, product of Kyocera Chemical Corp.)so as to cover the chip to obtain measurement samples.

The obtained measurement samples were subjected to MSL-Lv1, 2 and 3 ofthe reflow test after moisture absorption in conformity with JEDECJ-STD-020D1 (based on lead-free solder) under the conditions below.Then, whether or not inner delamination occurred was observed with theuse of an ultrasonic imaging apparatus (Fine SAT, product of HitachiPower Solutions Co., Ltd.). No PKG delamination after MSL-Lv3, at theleast, was determined to be acceptable in the present examples.

(Moisture Absorption Conditions)

MSL-Lv1: 168 hours at 85° C., 85% RH

MSL-Lv2: 168 hours at 85° C., 60% RH

MSL-Lv3: 192 hours at 30° C., 60% RH

(Reflow Classification Temperature)

260° C. in both of MSL-Lv1, 2 and 3

[Shear Adhesion (Adhesion/Heat Resistance)]

The dicing-die bonding films of the examples and comparative exampleswere bonded to the surfaces of Si wafers with an Au-plated backside at100° C., then the wafers were diced into 5 mm squares to obtain dicedchips (Au plating/Si wafer/electrically conductive adhesive film). Eachchip was die-bonded onto an Ag-plated metal lead frame at 140° C., thensintered for 3 hours at 230° C. so as to obtain measurement samples.

Shear adhesion of the electrically conductive adhesive films before andafter the thermal cycle test (hereinafter “TCT”) was measured withrespect to the obtained measurement samples.

(Adhesive Power Before TCT)

A die shear tester (multi-purpose bond tester series 4000, product ofNordson Advanced Technology) was used, and the scratch tool of the bondtester was hit against the side of the semiconductor chip of theobtained measurement samples at 100 μm/s, and the stress when thechip/lead frame bond was broken was measured as the shear adhesion at260° C. A shear adhesion before TCT of 10 MPa or more was determined tobe the acceptable level in the present examples.

(Adhesive Power after TCT)

Next, a thermal cycle test (TCT) was performed on the obtainedmeasurement samples by subjecting the samples to 200 cycles of atreatment in a temperature range of from −40 to +150° C. The shearadhesion of the treated samples was measured in the same manner as inthe aforementioned test concerning the adhesive power before TCT. Ashear adhesion after TCT of 10 MPa or more was determined to be theacceptable level in the present examples.

[Absorption Peak in DSC Measurement]

The thermal properties before and after sintering of the electricallyconductive adhesive films of the dicing-die boding films of the examplesand comparative examples were evaluated.

(Absorption Peak in a State Before Sintering)

The electrically conductive adhesive film was collected from eachdicing-die bonding film, and 10 mg was weighed and sealed in a dedicatedaluminum pan so as to prepare measurement samples. The measurement wasperformed with the use of a high-sensitivity differential scanningcalorimeter (DSC7000X, product of Hitachi High-Tech Science Corp.) undera nitrogen atmosphere (nitrogen flow rate: 20 mL/min.) at a temperaturerange of from room temperature to 350° C. and a temperature increaserate of 5° C./min. The presence or absence of endothermic peaks in atemperature range of from 200 to 250° C. was confirmed by the obtainedDSC chart.

(Absorption Peak in a State after Sintering)

The evaluation was performed in the same manner as in the aforementionedevaluation of the absorption peak in a state before sintering exceptthat each dicing-die bonding film was sintered for 4 hours at 250° C.under a nitrogen atmosphere, and the electrically conductive adhesivefilms were collected from the sintered dicing-die bonding films.

[Volume Resistivity (Electrical Conductivity)]

The electrically conductive adhesive films of the examples andcomparative examples were placed on a Teflon® sheet and sintered for 3hours at 230° C. so as to obtain measurement samples. Then, resistivityof the measurement samples was measured by the four probe method inaccordance with JIS-K7194-1994 so as to calculate the volumeresistivity. Loresta-GX, a product of Mitsubishi Chemical Analytech Co.,Ltd., was used for measuring the resistivity. The reciprocal of thevolume resistivity is the electrical conductivity, and a lower volumeresistivity indicates excellent electrical conductivity.

TABLE 1 Comparative Comparative Comparative Example 1 Example 2 Example3 Example 4 Example 1 Example 2 Example 3 Constituent Metal particleFirst metal Cu powder: 62.5% components (Q) particle (Q1) of adhesiveSecond metal Sn—Bi alloy powder: 31.2% agent particle (Q2) compositionResin (M) Maleimide resin Epoxy resin Flux Organic Organic OrganicOrganic Tetra - Tetra - Abietic phosphorous phosphine 1 phosphine 2phosphine 3 ethylene ethylene acid acid ester glycol glycol EvaluationPKG After No No No No Delamination Delamination Delamination resultsdelamination MSL-Lv.3 Delamination Delamination DelaminationDelamination After No No No No Delamination Delamination DelaminationMSL-Lv.2 Delamination Delamination Delamination Delamination AfterDelamination No Delamination No Delamination Delamination DelaminationMSL-Lv.1 Delamination Delamination Shear Before 18 22 14 20 9 9 8adhesion TCT [MPa] After 21 24 18 23 2 4 3 TCT Endothermic BeforeEndothermic peaks at 139° C. and 230° C. peak in DSC sinteringmeasurement After No endothermic peak sintering Volume resistivity 60037 990 38 400 300 700 [μΩ · cm] * In the table, the results in bold andunderlined indicate those outside the appropriate range of the presentinvention and those that did not reach the acceptable level in theexample

From the results above, it was confirmed that the electricallyconductive adhesive agent compositions of Examples 1 to 4, when used asan electrically conductive adhesive film, exhibit notable effects thatwere not achieved by prior art, i.e., both heat resistance after bondingand sintering and mounting reliability, by comprising a prescribed metalparticle (Q) and a prescribed organophosphorus compound (A).

In contrast, because the electrically conductive adhesive agentcompositions of Comparative Examples 1 to 3 did not contain theprescribed organophosphorus compound (A) specified in the presentdisclosure, the electrically conductive adhesive agent compositions ofComparative Examples 1 to 3, when used as an electrically conductiveadhesive film, had both inferior heat resistance after bonding andsintering and mounting reliability compared with the inventive Examples1 to 4. Specifically, in Comparative Examples 1 to 3, PKG delaminationoccurred even after MSL-Lv3 in the moisture absorption resistance test,which confirmed particularly poor moisture absorption resistance. Also,the shear adhesion notably deteriorated after TCT, which confirmed thatthe electrically conductive adhesive agent compositions of ComparativeExamples 1 to 3 also had poor thermal impact resistance.

The volume resistivity of Comparative Examples 1 and 2 is lower thanthat of Examples 1 and 3, and it may appear that Comparative Examples 1and 2 excel in electrical conductivity. However, since delaminationalready occurred in the measurement samples of Comparative Examples 1and 2 after MSL-Lv3 in the moisture absorption resistance test, andsince the resistance becomes infinite in such a state, ComparativeExamples 1 and 2 cannot be considered to excel in electricalconductivity from a practical point of view. Also, the adhesive power ofthe measurement samples of Comparative Examples 1 and 2 notablydeteriorated after TCT.

In other words, an electrically conductive adhesive film which excels inheat resistance and moisture absorption resistance, which is capable ofstable conduction, and which therefore has a high mounting reliability,even if the electrical conductance of the film itself is a little low,as with Examples 1 and 3, is understood to be desirable from a practicalpoint of view.

What is claimed is:
 1. An electrically conductive adhesive agentcomposition comprising: a metal particle (Q); and an organophosphoruscompound (A) represented by the general formula (1) below, wherein themetal particle (Q) comprises a first metal particle (Q1) made of asingle metal selected from the group of copper, nickel, aluminum and tinor an alloy comprising two or more metals selected from said group(R_(x)POR)_(y)  (1) in the general formula (1), each R independentlyrepresents an organic group, R may be the same or different with eachother, both x and y are an integer from 0 to 3, and the sum (x+y) of xand y is
 3. 2. The electrically conductive adhesive agent compositionaccording to claim 1, wherein, in the general formula (1), each R isindependently selected from an alkyl group, an aryl group, an organicgroup including a functional group, an organic group including aheteroatom, and an organic group including an unsaturated bond.
 3. Theelectrically conductive adhesive agent composition according to claim 1,wherein, in the general formula (1), each R independently comprises, inits moiety, one or more group selected from a vinyl group, an acrylicgroup, a methacrylic group, a maleic acid ester group, a maleic acidamide group, a maleic acid imide group, a primary amino group, asecondary amino group, a thiol group, a hydrosilyl group, a hydroborongroup, a phenolic hydroxyl group and an epoxy group.
 4. The electricallyconductive adhesive agent composition according to claim 1, wherein theorganophosphorus compound (A) has a number average molecular weight of260 or more.
 5. The electrically conductive adhesive agent compositionaccording to claim 1, further comprising a resin (M), wherein at least aportion of the resin (M) is a thermosetting resin (M1).
 6. Theelectrically conductive adhesive agent composition according to claim 5,wherein the thermosetting resin (M1) comprises a maleic acid imidecompound including two or more units of an imide group in a singlemolecule.
 7. The electrically conductive adhesive agent compositionaccording to claim 6, wherein the maleic acid imide compound comprises abackbone derived from an aliphatic amine having a carbon atom number of10 or more.
 8. The electrically conductive adhesive agent compositionaccording to claim 6, wherein the maleic acid imide compound has anumber average molecular weight of 3000 or more.
 9. The electricallyconductive adhesive agent composition according to claim 1, wherein themetal particle (Q) is a mixture comprising the first metal particle (Q1)and a second metal particle (Q2) based on a metal component differentfrom the first metal particle (Q1), and the first metal particle (Q1)and the second metal particle (Q2) comprise a metal component capable ofmutually forming an intermetallic compound.
 10. The electricallyconductive adhesive agent composition according to claim 9, wherein thesecond metal particle (Q2) is made of a single metal selected from thegroup of copper, nickel, aluminum, tin, zinc, titanium, silver, gold,indium, bismuth, gallium and palladium or an alloy comprising two ormore metals selected from said group.
 11. The electrically conductiveadhesive agent composition according to claim 9, wherein at least one ofthe first metal particle (Q1) and the second metal particle (Q2) is analloy particle comprising two or more metal components.
 12. Theelectrically conductive adhesive agent composition according to claim 1,wherein at least one endothermic peak is observed in a temperature rangeof from 100 to 250° C. in DSC (differential scanning calorimetry) in astate before sintering, and the endothermic peak disappears in a stateafter sintering.
 13. An electrically conductive adhesive film,comprising the electrically conductive adhesive agent compositionaccording to claim 1 formed in the form of a film onto a substrate. 14.A dicing-die bonding film, comprising: a dicing tape; and theelectrically conductive adhesive film according to claim 13 adhered tothe dicing tape.